In this work, we report the fabrication of ordered silicon structures by\udchemical etching of silicon in vanadium oxide (V2O5)/hydrofluoric acid\ud(HF) solution. The effects of the different etching parameters including\udthe solution concentration, temperature, and the presence of metal\udcatalyst film deposition (Pd) on the morphologies and reflective\udproperties of the etched Si surfaces were studied. Scanning electron\udmicroscopy (SEM) was carried out to explore the morphologies of the\udetched surfaces with and without the presence of catalyst. In this case,\udthe attack on the surfaces with a palladium deposit begins by creating\uduniform circular pores on silicon in which we distinguish the formation\udof pyramidal structures of silicon. Fourier transform infrared\udspectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A\udUV-Vis-NIR spectrophotometer was used to study the reflectance of the\udstructures obtained. A reflectance of 2.21\% from the etched Si surfaces\udin the wavelength range of 400 to 1,000 nm was obtained after 120 min of\udetching while it is of 4.33\% from the Pd/Si surfaces etched for 15 min.
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